Two dimensional electron transport in modulation-doped In0.53Ga0.47As/AlAs0.56Sb0.44 ultrathin quantum wells
نویسندگان
چکیده
In0.53Ga0.47As/AlAs0.56Sb0.44 ultrathin quantum wells Cheng-Ying Huang, Jeremy J. M. Law, Hong Lu, Debdeep Jena, Mark J. W. Rodwell, and Arthur C. Gossard Department of Electrical and Computer Engineering, University of California, Santa Barbara, California 93106, USA Materials Department, University of California, Santa Barbara, California 93106-5050, USA Department of Electrical Engineering, University of Notre Dame, Notre Dame, Indiana 46556, USA
منابع مشابه
Limitation of Electron Mobility in Modulation-Doped In0.53Ga0.47As/InP Quantum Wells at Low Temperatures
The low-temperature electron mobility is investigated here for electrons confined in modulation-doped In0.53Ga0.47As/InP single symmetric quantum wells. The subband structure calculation is developed via variational method, both Schrödinger and Poisson equations being solved simultaneously with adequate heterointerface matching conditions. With this in hands, the main electron scattering rates ...
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